Diamond-like carbon coating for passive and active electronics
AssigneeHoneywell Federal Manufacturing & Technologies, LLC
InventorsErik Joseph Timpson, Justin M. Schlitzer, Thomas Matthew Selter, Michael Walsh
Life of this patent
Estimating the term…
Abstract
Systems and methods for building passive and active electronics with diamond-like carbon (DLC) coatings are provided herein. DLC may be layered upon substrates to form various components of electronic devices. Passive components such as resistors, capacitors, and inductors may be built using DLC as a dielectric or as an insulating layer. Active components such as diodes and transistors may be built with the DLC acting substantially like a semiconductor. The amount of sp2 and sp3 bonded carbon atoms may be varied to modify the properties of the DLC for various electronic components.
Claims20
A transistor, comprising:
- a body region having a first end-region and a second end-region, the body region comprising at least one p-type dopant;
- a source terminal connected to the first end-region;
- a drain terminal connected to the second end-region,
- wherein the source terminal and the drain terminal comprise at least one n-type dopant mixed with semiconducting diamond-like carbon (DLC);
- a DLC layer disposed on top of and extending between the source terminal and the drain terminal;
- and
- a gate terminal disposed on top of the DLC layer,
- wherein the DLC layer electrically isolates the gate terminal from the source terminal and the drain terminal.
A transistor, comprising:
- a body region having a first end-region and a second end-region, the body region comprising at least one p-type dopant;
- a source terminal connected to the first end-region;
- a drain terminal connected to the second end-region,
- wherein the source terminal and the drain terminal comprise at least one n-type dopant mixed with semiconducting diamond-like carbon (DLC)
- a DLC layer disposed on top of and extending between the source terminal and the drain terminal;
- and
- a gate terminal comprising a refractory metal that is disposed on top of the DLC layer,
- wherein the DLC layer electrically isolates the gate terminal from the source terminal and the drain terminal.
A transistor, comprising:
- a body region having a first end-region and a second end-region, the body region comprising at least one p-type dopant;
- a source terminal connected to the first end-region;
- a drain terminal connected to the second end-region,
- wherein the source terminal and the drain terminal comprise at least one n-type dopant mixed with semiconducting diamond-like carbon (DLC)
- a DLC layer disposed on top of and extending between the source terminal and the drain terminal;
- and
- a gate terminal comprising a silicide that is disposed on top of the DLC layer,
- wherein the DLC layer electrically isolates the gate terminal from the source terminal and the drain terminal.
A transistor, comprising:
- a body region having a first end-region and a second end-region, the body region comprising at least one p-type dopant;
- a source terminal connected to the first end-region;
- a drain terminal connected to the second end-region,
- wherein the source terminal and the drain terminal comprise at least one n-type dopant mixed with semiconducting diamond-like carbon (DLC)
- a DLC layer disposed on top of and extending between the source terminal and the drain terminal;
- and
- a gate terminal comprising a silicide that is disposed on top of the DLC layer,
- wherein the DLC layer electrically isolates the gate terminal from the source terminal and the drain terminal.
Dependencies are inferred from the claim text.