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US 11,961,890 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Fu Lin, Chia-Ta Hsieh, Tsung-Hao Yeh
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Abstract
A semiconductor device includes a semiconductor layer and a gate structure on the semiconductor layer. The gate structure includes a multi-stepped gate dielectric on the semiconductor layer and a gate electrode on the multi-stepped gate dielectric. The multi-stepped gate dielectric includes a first gate dielectric segment having a first thickness and a second gate dielectric segment having a second thickness that is less than the first thickness.
Claims20
A semiconductor device comprising:
- a semiconductor layer having an upper surface;
- a dielectric film disposed in the semiconductor layer;
- and
- a gate structure disposed on the semiconductor layer, and including:
- a multi-stepped gate dielectric disposed on the semiconductor layer, and including a first gate dielectric portion and a second gate dielectric portion connected to the first gate dielectric portion, the first gate dielectric portion having a flat upper surface, the second gate dielectric portion having a stepped upper surface that includes a flat upper surface portion connected to and flush with the flat upper surface of the first gate dielectric portion, and
- a gate electrode disposed on the multi-stepped gate dielectric,
- wherein a projection of the dielectric film on the upper surface of the semiconductor layer is non-overlapping with a projection of the second gate dielectric portion on the upper surface of the semiconductor layer, and
- wherein the projection of the dielectric film on the upper surface of the semiconductor layer is connected to the projection of the second gate dielectric portion on the upper surface of the semiconductor layer.
5 more elements
A semiconductor device comprising:
- a semiconductor layer having an upper surface;
- a drift region disposed in the semiconductor layer and having a first conductivity type;
- a well region disposed in the semiconductor layer and having a second conductivity type opposite the first conductivity type;
- a dielectric film disposed in the drift region;
- and
- a gate structure disposed on the semiconductor layer and including:
- a multi-stepped gate dielectric including a first gate dielectric portion and a second gate dielectric portion connected to the first gate dielectric portion, the first gate dielectric portion having a flat upper surface, the second gate dielectric portion having a stepped upper surface that includes a flat upper surface portion connected to and flush with the flat upper surface of the first gate dielectric portion, and
- a gate electrode disposed on the multi-stepped gate dielectric,
- wherein a projection of the dielectric film on the upper surface of the semiconductor layer is non-overlapping with a projection of the second gate dielectric portion on the upper surface of the semiconductor layer, and
- wherein the multi-stepped gate dielectric includes a first gate dielectric segment disposed on the dielectric film and the drift region, a second gate dielectric segment disposed on the drift region and connected to the first gate dielectric segment, and a third gate dielectric segment disposed on the drift region and the well region and connected to the second gate dielectric segment, the first gate dielectric segment having a first thickness, the second gate dielectric segment having a second thickness that is less than the first thickness, the third gate dielectric segment having a third thickness that is less than the second thickness.
7 more elements
A semiconductor device comprising:
- a semiconductor layer having an upper surface;
- a drift region disposed in the semiconductor layer and having a first conductivity type;
- a well region disposed in the semiconductor layer and having a second conductivity type opposite the first conductivity type;
- a dielectric film disposed in the drift region;
- and
- a gate structure disposed on the semiconductor layer and including:
- a multi-stepped gate dielectric including a first gate dielectric portion and a second gate dielectric portion connected to the first gate dielectric portion, the first gate dielectric portion having a flat upper surface, the second gate dielectric portion having a stepped upper surface that includes a flat upper surface portion connected to and flush with the flat upper surface of the first gate dielectric portion, and
- a gate electrode disposed on the multi-stepped gate dielectric,
- wherein a projection of the dielectric film on the upper surface of the semiconductor layer is non-overlapping with a projection of the second gate dielectric portion on the upper surface of the semiconductor layer, and
- wherein the first gate dielectric portion overlaps the dielectric film, and the second gate dielectric portion is non-overlapping with the dielectric film and is in contact with the drift region and the well region.
7 more elements
Dependencies are inferred from the claim text.