Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices

A method comprising:

• forming a semiconductor device having an active region in a conduction layer over a substrate;
• forming an insulating layer over at least a portion of the active region and over at least a portion of the conduction layer outside the active region;
• creating an isolation region in the conduction layer, the isolation region extending around the semiconductor device in an area outside the active region;
• forming a via through the insulating layer outside the active region, the via extending down to the isolation region in the conduction layer;
• and
• depositing a conductive interconnect directly on the isolation region within the via outside the active region.

An integrated device comprising:

• an active region in a conduction layer;
• an isolation region extending around the active region;
• an insulating layer formed over at least a portion of the active region and over at least a portion of the isolation region;
• a via outside the active region, the via extending through the insulating layer and down to the isolation region;
• and
• a conductive interconnect within the via outside the active region and directly on the isolation region.