Semiconductor structure with conductive structure

A semiconductor structure, comprising:

• a first source/drain structure and a second source/drain structure formed over a substrate;
• nanostructures suspended over the substrate, wherein the nanostructures are spaced apart from each other in a first direction and interpose the first source/drain structure and the second source/drain structure in a second direction different from the first direction;
• a contact landing on the first source/drain structure;
• a gate structure wrapping around the nanostructures and extending along a third direction different from the first direction and the second direction;
• a first conductive structure formed over the gate structure;
• and
• a second conductive structure extending into a space between the first conductive structure and the contact along the first direction,
• wherein a top surface of the second conductive structure is higher than a top surface of the contact, and a bottom surface of the second conductive structure is lower than the top surface of the contact.

A semiconductor structure, comprising:

• a gate structure formed in a channel region of a substrate;
• a gate spacer covering a sidewall of the gate structure;
• a mask layer formed over the gate structure and the gate spacer;
• a first conductive structure formed through the mask layer;
• a second conductive structure formed adjacent to the first conductive structure;
• and
• a contact formed over a source/drain region of the substrate,
• wherein the gate spacer is laterally sandwiched between a first portion of the contact and the gate structure, the mask layer is laterally sandwiched between a second portion of the contact and the first conductive structure, the second conductive structure is laterally sandwiched between a third portion of the contact and the first conductive structure.