Fill structures with air gaps
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiu-Yung Lin, Yen Chuang, Min-Hao Hong
Life of this patent
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Abstract
The present disclosure describes a semiconductor device with a fill structure. The semiconductor structure includes first and second fin structures on a substrate, an isolation region on the substrate and between the first and second fin structures, a first gate structure disposed on the first fin structure and the isolation region, a second gate structure disposed on the second fin structure and the isolation region, and the fill structure on the isolation region and between the first and second gate structures. The fill structure includes a dielectric structure between the first and second gate structures and an air gap enclosed by the dielectric structure. The air gap is below top surfaces of the first and second fin structures.
Claims20
A semiconductor structure, comprising:
- first and second fin structures on a substrate;
- an isolation region on the substrate and between the first and second fin structures;
- a first gate structure disposed on the first fin structure and the isolation region;
- a second gate structure disposed on the second fin structure and the isolation region;
- a gate spacer on sidewalls of the first and second gate structures;
- a dielectric layer on the isolation region and surrounding the first and second gate structures, wherein the dielectric layer comprises a first dielectric material;
- and
- a fill structure on the isolation region and between the first and second gate structures, wherein the fill structure comprises:
- a dielectric structure between the first and second gate structures and in contact with the gate spacer, the dielectric layer, and the first and second gate structures, wherein the dielectric structure comprises a second dielectric material different from the first dielectric material;
- and
- an air gap enclosed by the dielectric structure, wherein the air gap is below top surfaces of the first and second fin structures.
A semiconductor structure, comprising:
- first and second fin structures on a substrate;
- a first gate structure disposed on the first fin structure;
- a second gate structure disposed on the second fin structure;
- a gate spacer on sidewalls of the first and second gate structures;
- an interlayer dielectric structure on the substrate and surrounding the first and second gate structures, wherein the interlayer dielectric structure comprises a first dielectric material;
- and
- a fill structure in the interlayer dielectric structure and separating the first and second gate structures, wherein the fill structure comprises:
- a dielectric structure in contact with the gate spacer, the interlayer dielectric structure, and the first and second gate structures, wherein the dielectric structure comprises a second dielectric material different from the first dielectric material;
- and
- an air gap below top surfaces of the first and second fin structures.
A semiconductor device, comprising:
- first and second transistors on a substrate, wherein the first transistor comprises a first fin structure and a first gate structure and the second transistor comprises a second fin structure and a second gate structure;
- an isolation region on the substrate and separating the first and second fin structures;
- a gate spacer on sidewalls of the first and second gate structures;
- a dielectric layer on the isolation region and surrounding the first and second gate structures, wherein the dielectric layer comprises a first dielectric material;
- and
- a fill structure on the isolation region and separating the first and second gate structures, wherein the fill structure comprises:
- a dielectric structure in contact with the isolation region and the first and second gate structures and in contact with the gate spacer, the dielectric layer, and the first and second gate structures, wherein the dielectric structure comprises a second dielectric material different from the first dielectric material;
- and
- an air gap enclosed by the dielectric structure and below top surfaces of the first and second fin structures.
Dependencies are inferred from the claim text.