Method for forming semiconductor structure and semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorLingxiang Wang
Life of this patent
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Abstract
A method for forming a semiconductor structure includes providing a semiconductor substrate, which at least includes discrete conducting layers in the semiconductor substrate; forming discretely arranged supporting structures on the semiconductor substrate, capacitor openings being included between the supporting structures; forming lower electrodes on sidewalls of the supporting structures, the lower electrodes being electrically connected with the conducting layers; forming a capacitor dielectric layer covering tops of the supporting structures, sidewalls of the lower electrodes, and bottoms of the capacitor openings; and forming an upper electrode covering the capacitor dielectric layer, to form capacitor structures.
Claims13
A method for forming a semiconductor structure, comprising:
- providing a semiconductor substrate, which at least comprises discrete conducting layers in the semiconductor substrate;
- forming a bottom conducting layer on the semiconductor substrate, the bottom conducting layer being electrically connected with the conducting layers;
- forming discretely arranged supporting structures on the bottom conducting layer, capacitor openings being comprised between the supporting structures;
- forming lower electrodes on sidewalls of the supporting structures, the lower electrodes being electrically connected with the bottom conducting layer;
- etching away the bottom conducting layer exposed from the bottom of the capacitance openings, the bottom conducting layer located only between the semiconductor substrate and the supporting structure;
- forming a capacitor dielectric layer covering tops of the supporting structures, sidewalls of the lower electrodes, and bottoms of the capacitor openings;
- and
- forming an upper electrode covering the capacitor dielectric layer, to form capacitor structures.
A semiconductor structure, comprising:
- a semiconductor substrate, wherein at least discrete conducting layers are comprised in the semiconductor substrate;
- multiple discrete supporting structures, located on the semiconductor substrate;
- and
- capacitor structures supported by the supporting structures, wherein each capacitor structure comprises:
- a lower electrode, located on a sidewall of a corresponding one of the supporting structures;
- a bottom conducting layer, located only between the semiconductor substrate and the supporting structure and configured to electrically connect the lower electrode and the conducting layer;
- wherein the supporting structure is on the bottom conducting layer;
- a capacitor dielectric layer, located at a top of the supporting structure, a sidewall of the lower electrode, and a bottom of a gap between the supporting structures;
- and
- an upper electrode, located on the capacitor dielectric layer.
Dependencies are inferred from the claim text.