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US 11,961,875 B2Granted
Monolithic segmented LED array architecture with islanded epitaxial growth
AssigneeLumileds LLC
InventorsAshish Tandon, Rajat Sharma, Joseph Flemish, Andrei Papou, Wen Yu, Erik William Young, Yu-Chen Shen, Luke Gordon
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Abstract
A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.
Claims10
An LED array comprising:
- a plurality of pixels, each pixel separated from an adjacent pixel by a trench extending from a p-type semiconductor layer to a distal surface of an n-type semiconductor layer;
- an n-type contact in the trench;
- the n-type semiconductor layer disposed on an active layer on the p-type semiconductor layer;
- a wavelength converting layer on the n-type semiconductor layer on a surface opposite the active layer;
- a p-type contact on the p-type semiconductor layer;
- and
- one or more passivation layer extending from the p-type semiconductor layer to the n-type semiconductor layer and separating the n-type contact from the active layer and the p-type layer, the one or more passivation layer extending at least partially on a sidewall of the n-type semiconductor layer,
- wherein at least part of the wavelength converting layer is separated by the n-type contact in the trench.
5 more elements
An LED array comprising:
- a plurality of pixels, each pixel separated from an adjacent pixel by a trench extending from a p-type semiconductor layer to a distal surface of an n-type semiconductor layer;
- an n-type contact in the trench;
- the n-type semiconductor layer disposed on an active layer on the p-type semiconductor layer;
- a wavelength converting layer on the n-type semiconductor layer on a surface opposite the active layer;
- a p-type contact on the p-type semiconductor layer;
- and
- one or more passivation layer extending from the p-type semiconductor layer to the n-type semiconductor layer and separating the n-type contact from the active layer and the p-type layer, the one or more passivation layer extending at least partially on a sidewall of the n-type semiconductor layer,
- wherein the n-type contact extends to the wavelength converting layer and provides at least partial optical isolation between each pixel.
5 more elements
Dependencies are inferred from the claim text.