Imaging element, semiconductor element, and electronic apparatus

A semiconductor element, comprising:

• a semiconductor layer including a contact layer that includes a compound semiconductor material and is provided with a diffusion region of first electrically-conductive type impurities in a selective region;
• a first insulating layer being in contact with the contact layer and stacked on the semiconductor layer, and the first insulating layer having a first opening at a position facing the diffusion region;
• and
• a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.

An electronic apparatus, comprising:

• an imaging element,
• the imaging element including:
• a photoelectric conversion layer including a compound semiconductor material,
• a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region,
• a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region, and
• a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.

An electronic apparatus, comprising:

• a semiconductor element,
• the semiconductor element including:
• a semiconductor layer including a contact layer that includes a compound a semiconductor material and is provided with a diffusion region of first electrically-conductive type impurities in a selective region,
• a first insulating layer being in contact with the contact layer and stacked on the semiconductor layer, and the first insulating layer having a first opening at a position facing the diffusion region, and
• a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.