Solid-state imaging element and electronic apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorAtsushi Masagaki
Life of this patent
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Abstract
A solid-state imaging element of an embodiment of the present disclosure includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel transistor provided on one surface of the semiconductor substrate; and an element separation section provided in the semiconductor substrate and including a first element separation section and a second element separation section that have mutually different configurations, the element separation section defining an active region of the pixel transistor, in which the second element separation section has, on a side surface, a first semiconductor region and a second semiconductor region that have mutually different impurity concentrations in a depth direction of the second element separation section.
Claims20
A solid-state imaging element comprising:
- a semiconductor substrate including a photoelectric conversion section for each pixel;
- a pixel transistor provided on one surface of the semiconductor substrate;
- and
- an element separation section provided in the semiconductor substrate and including a first element separation section and a second element separation section that have mutually different configurations,
- wherein the first element separation section extends beyond the one surface of the semiconductor substrate and overlaps with the photoelectric conversion section in a cross-sectional view and the second element separation section extends beyond the one surface of the semiconductor substrate in the cross-sectional view,
- wherein the element separation section defines an active region of the pixel transistor,
- wherein the second element separation section has, on a side surface, a first semiconductor region and a second semiconductor region that have mutually different impurity concentrations in a depth direction of the second element separation section, and
- wherein a conductive type of each of the first and second semiconductor regions is different than a conductive type of the photoelectric conversion section.
An electronic apparatus, comprising:
- a solid-state imaging element including:
- a semiconductor substrate including a photoelectric conversion section for each pixel;
- a pixel transistor provided on one surface of the semiconductor substrate;
- and
- an element separation section provided in the semiconductor substrate and including a first element separation section and a second element separation section that have mutually different configurations,
- wherein the first element separation section extends beyond the one surface of the semiconductor substrate and overlaps with the photoelectric conversion section in a cross-sectional view and the second element separation section extends beyond the one surface of the semiconductor substrate in the cross-sectional view,
- wherein the element separation section defines an active region of the pixel transistor,
- wherein the second element separation section has, on a side surface, a first semiconductor region and a second semiconductor region that have mutually different impurity concentrations in a depth direction of the second element separation section, and
- wherein a conductive type of each of the first and second semiconductor regions is different than a conductive type of the photoelectric conversion section.
Dependencies are inferred from the claim text.