Solid-state imaging element, electronic device, and method of manufacturing electronic device

An electronic device comprising:

• a surface layer that has a thickness exceeding a half of a coherence length of incident light, wherein
• the surface layer includes an antireflection film, a transparent resin layer, and a stress relaxation layer, and
• the transparent resin layer is between the antireflection film and the stress relaxation layer;
• a filter layer configured to transmit a first portion of the incident light transmitted through the surface layer and reflect a second portion of the incident light transmitted through the surface layer to the surface layer, wherein the second portion of the incident light transmitted through the surface layer is different from the first portion of the incident light transmitted through the surface layer;
• a photoelectric conversion layer configured to photoelectrically convert the first portion of the incident light transmitted through the filter layer to generate a pixel signal;
• and
• a signal processing unit configured to execute a signal processing operation for the pixel signal.

A method of manufacturing an electronic device, comprising:

• a first etching procedure of exposing a part of a photoelectric conversion layer by etching for a solid-state imaging element, the solid-state imaging element including:
• a surface layer that has a thickness exceeding a half of a coherence length of incident light, wherein
• the surface layer includes an antireflection film, a transparent resin layer, and a stress relaxation layer, and
• the transparent resin layer is between the antireflection film and the stress relaxation layer,
• a filter layer configured to transmit a first part of the incident light transmitted through the surface layer and reflect a second part of the incident light transmitted through the surface layer to the surface layer, wherein the second part of the incident light transmitted through the surface layer is different from the first part of the incident light transmitted through the surface layer, and
• the photoelectric conversion layer configured to photoelectrically convert the first part of the incident light transmitted through the filter layer, and
• a pad;
• a second etching procedure of exposing the pad by opening the part of the photoelectric conversion layer by etching;
• and
• a connecting procedure of connecting the exposed pad to a support substrate by a wire.