Semiconductor device
OwnerSywe Neng Leeinventor
Life of this patent
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Abstract
A semiconductor device, including a dielectric layer and a semiconductor substrate, is provided. The dielectric layer has a convexity or a concavity. The semiconductor substrate includes a first type semiconductor layer and a second type semiconductor layer sequentially stacked on the dielectric layer. The first type semiconductor layer is disposed on the convexity or the concavity. A top surface and a bottom surface of the first type semiconductor layer are protruded according to the convexity or recessed according to the concavity. A bottom surface of the second type semiconductor layer is protruded according to the convexity or recessed according to the concavity.
Claims11
A semiconductor device, comprising:
- a dielectric layer, with a convexity or a concavity;
- and
- a semiconductor substrate, comprising a first type semiconductor layer and a second type semiconductor layer sequentially stacked on the dielectric layer, wherein the first type semiconductor layer is disposed on the convexity or the concavity, a top surface and a bottom surface of the first type semiconductor layer are protruded according to the convexity or recessed according to the concavity, and a top surface and a bottom surface of the second type semiconductor layer are protruded according to the convexity or recessed according to the concavity, and wherein:
- the semiconductor device is an image sensor that comprises a photodiode comprising the first type semiconductor layer and the second type semiconductor layer, and
- a thickness of the dielectric layer gradually decreases outward from a center of the convexity or gradually increases outward from a center of the concavity.
A semiconductor device, comprising:
- a semiconductor substrate, comprising a first type semiconductor layer and a second type semiconductor layer, wherein the first type semiconductor layer has a top surface and a bottom surface, the bottom surface of the first type semiconductor layer has a convexity or a concavity, the top surface of the first type semiconductor layer is protruded according to the convexity or recessed according to the concavity, the second type semiconductor layer is disposed on the top surface of the first type semiconductor layer, and a top surface and a bottom surface of the second type semiconductor layer are protruded according to the convexity or recessed according to the concavity, and wherein:
- the semiconductor device is an image sensor that comprises a photodiode comprising the first type semiconductor layer and the second type semiconductor layer.
A semiconductor device, comprising:
- a dielectric layer without convexities or concavities;
- and
- a semiconductor substrate, comprising a first type semiconductor layer and a second type semiconductor layer, wherein the first type semiconductor layer is disposed between the dielectric layer and the second type semiconductor layer and has a top surface having a convexity or a concavity, the second type semiconductor layer is disposed on the top surface of the first type semiconductor layer, and a bottom surface of the second type semiconductor layer is protruded according to the convexity or recessed according to the concavity, and
- wherein a thickness of the first type semiconductor layer gradually decreases outward from a center of the convexity or gradually increases outward from a center of the concavity.
Dependencies are inferred from the claim text.