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US 11,961,836 B2Granted
FinFET varactor quality factor improvement
AssigneeIntel Corporation
InventorsHyung-Jin Lee, Mark Armstrong, Saurabh Morarka, Carlos Nieva-Lozano, Ayan Kar
Life of this patent
Estimating the term…
Abstract
An integrated circuit structure comprises one or more fins extending above a surface of a substrate over an N-type well. A gate is over and in contact with the one or more fins. A second shallow N-type doping is below the gate and above the N-type well.
Claims10
An integrated circuit structure, comprising:
- a plurality of fins extending above a surface of a substrate along a first direction, the plurality of fins spaced apart from one another;
- a gate over the plurality of fins, the gate along a second direction substantially orthogonal with the first direction;
- an insulating layer that surrounds and is in contact with respective ones of the plurality of fins in-between the substrate and the gate;
- an N-type well located in the substrate below the plurality of fins;
- and
- an N-type doping in the substrate between the plurality of fins and the N-type well, the N-type doping extending vertically from the substrate to only a portion a height of the respective ones of the plurality of fins that extend above the surface of the substrate and below the gate, wherein the N-type doping has a doping concentration of 2e18-7e18.
3 more elements
A FinFET varactor, comprising:
- an N-type well within a substrate;
- a plurality of fins along a first direction extending above a surface of the substrate over the N-type well, the plurality of fins spaced apart from one another;
- a plurality of gates over the plurality of fins that extend above the surface of a substrate, the plurality of gates along a second direction substantially orthogonal with the first direction;
- an insulating layer that surrounds and is in contact with respective ones of the plurality of fins in-between the substrate and the plurality of gates;
- and
- an N-type doping in the substrate between the plurality of fins and the N-type well, the N-type doping extending vertically from the substrate to only a portion a height of the respective ones of the plurality of fins that extend above the surface of the substrate and below the plurality of gates, wherein the N-type doping has a doping concentration of 2e18-7e18.
3 more elements
Dependencies are inferred from the claim text.