Semiconductor device having multiple electrostatic discharge (ESD) paths

A semiconductor device, comprising:

• a first diode, wherein a first terminal of the first diode is coupled to a first voltage terminal that is configured to receive a first supply voltage, wherein the first diode is configured to direct a first part of an electrostatic discharge (ESD) current flowing between an input/output (I/O) pad and the first voltage terminal;
• a second diode, wherein a first terminal of the second diode, the I/O pad, and a second terminal of the first diode are coupled to each other, and a second terminal of the second diode is coupled to a second voltage terminal that is configured to receive a second supply voltage, wherein the second diode has a first doped region that corresponds to the first terminal of the second diode and extends in a first direction;
• and
• a third diode, wherein first and second terminals of the third diode are coupled to the first voltage terminal,
• wherein the second diode and the third diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.

A semiconductor device, comprising:

• a first diode having at least one first doped strap and a second doped strap in a first well, wherein the at least one first doped strap is configured as at least one terminal coupled to a first voltage terminal and the second doped strap is coupled to an input/output (I/O) pad;
• and
• a second diode having a third doped strap that is in a second well different from the first well and separated from the at least one first doped strap,
• wherein the third doped strap is configured as a first terminal of the second diode to be coupled to a second voltage terminal,
• wherein the first diode and the second diode are included a semiconductor structure configured to operate as an equivalent silicon controlled rectifier circuit between the I/O pad and the second voltage terminal.