Semiconductor structures and method of manufacturing the same

A semiconductor structure, comprising:

• a first electrical connector, disposed on a semiconductor element;
• a first conductive layer, surrounding the first electrical connector;
• a gap between the first electrical connector and the first conductive layer;
• a first dielectric layer, disposed on the first electrical connector and the first conductive layer;
• and
• a second dielectric layer, surrounding the first conductive layer and being in direct contact with the first dielectric layer, wherein the second dielectric layer is physically separated from the first electrical connector by the gap and the first conductive layer.

A method of manufacturing a semiconductor structure, comprising:

• providing a first dielectric layer and a first electrical connector;
• providing a semiconductor element having a first surface and a second surface opposite to the first surface;
• forming a second dielectric layer adjacent to the first surface of the semiconductor element, wherein the second dielectric layer defines a first opening;
• forming a first conductive layer in the first opening, wherein the first conductive layer defines a second opening;
• and
• disposing the first electrical connector in the second opening, wherein the first electrical connector is disposed adjacent to the first surface of the semiconductor element, the first conductive layer surrounds the first electrical connector, a gap is formed between the first electrical connector and the first conductive layer, the first dielectric layer is disposed on the first electrical connector and the first conductive layer, the second dielectric layer surrounds the first conductive layer, and the first dielectric layer is in direct contact with the gap, the first electrical connector, the first conductive layer and the second dielectric layer.