Semiconductor structure having high breakdown voltage etch-stop layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJoung-Wei Liou, Chin Kun Lan
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Abstract
The present disclosure relates to a method of forming a semiconductor structure. The method includes depositing an etch-stop layer (ESL) over a first dielectric layer. The ESL layer deposition can include: flowing a first precursor over the first dielectric layer; purging at least a portion of the first precursor; flowing a second precursor over the first dielectric layer to form a sublayer of the ESL layer; and purging at least a portion of the second precursor. The method can further include depositing a second dielectric layer on the ESL layer and forming a via in the second dielectric layer and through the ESL layer.
Claims20
A semiconductor structure, comprising:
- a first conductive structure in a first dielectric layer;
- an etch stop layer, disposed on the first dielectric layer and the first conductive structure, comprising a first oxide layer, an oxycarbide layer, and a second oxide layer;
- a second dielectric layer disposed on the etch stop layer;
- and
- an array of second conductive structures disposed on the etch stop layer, wherein bottom surfaces of the second conductive structures of the array of second conductive structures are in direct contact with a top surface of the etch stop layer.
A semiconductor structure, comprising:
- a semiconductor device;
- a first conductive structure disposed on the semiconductor device;
- a first etch stop layer, disposed on the first conductive structure, comprising first and second aluminum oxide layers and a first silicon oxycarbide layer;
- a dielectric layer disposed on the first etch stop layer;
- an array of second conductive structures disposed on the first etch stop layer and in the dielectric layer;
- and
- a second etch stop layer, disposed on the array of second conductive structures, comprising third and fourth aluminum oxide layers and a second silicon oxycarbide layer.
A semiconductor structure, comprising:
- a first conductive structure in a first dielectric layer;
- an etch stop layer, disposed on the first dielectric layer and the first conductive structure, comprising a first oxide layer, an oxycarbide layer, a second oxide layer, and an atomic concentration of hydrogen between about 0.5% and about 3%;
- a second dielectric layer disposed on the etch stop layer;
- and
- a second conductive structure disposed on the first conductive structure through the second dielectric layer and the etch stop layer.
Dependencies are inferred from the claim text.