Semiconductor package dielectric substrate including a trench
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYueh-Ting Lin, Hua-Wei Tseng, Ming Shih Yeh, Der-Chyang Yeh
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Abstract
A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.
Claims20
A package, comprising:
- at least one first device die;
- and
- a redistribution line (RDL) structure having the at least one first device die bonded thereto, the RDL structure comprising:
- a plurality of dielectric layers, and
- a plurality of RDLs formed through the plurality of dielectric layers,
- wherein a trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers, the trench separates a first portion and a second portion of the RDL structure completely from each other, and the at least one first device die is disposed only above the first portion;
- and wherein only the first portion of the RDL structure comprises one or more active RDL components.
A package, comprising:
- at least one first device die;
- and
- a redistribution line (RDL) structure having the first device die bonded thereto, the RDL structure comprising:
- a plurality of dielectric layers, and
- a plurality of RDLs formed through the plurality of dielectric layers;
- and
- a pillar disposed axially outwards of the RDL structure and separated from the RDL structure, the pillar comprising the plurality of dielectric layers.
A package, comprising:
- a device die;
- a redistribution line (RDL) structure having the device die bonded thereto, the RDL structure comprising:
- a plurality of dielectric layers, and
- a plurality of RDLs formed through the plurality of dielectric layers,
- wherein a trench extends through each of the plurality of dielectric layers, and is disposed around axial edges of the RDL structure with the device die disposed inside the axial edges;
- and wherein the trench separates the RDL structure completely into a first portion and a second portion, and only the first portion comprises one or more active RDL components.
Dependencies are inferred from the claim text.