Semiconductor device package having multi-layer molding compound and method

A semiconductor device package comprising:

• a substrate means for providing electrical communication to one or more electrical components coupled to the substrate means;
• one or more storage means for providing a first storage amount and connected to a top planar surface of the substrate means, the one or more storage means and the substrate means defining at least a portion of a tunnel;
• a first control means for providing electrical communication with the first storage means, the first control means mounted on the top planar surface of the substrate means and positioned within the tunnel;
• a first encapsulation means for at least partially encapsulating the one or more spacing means, the first storage means, and the first control means, the first encapsulation means substantially filling the tunnel;
• and
• a second encapsulation means for covering a top planar surface of the first encapsulation means,
• wherein the first encapsulation means, when in a flowable state, has a viscosity that is lower than a viscosity of the second encapsulation means, when in a flowable state, and
• wherein the first encapsulation means is separate and distinct from the second encapsulation means.

A method of forming a semiconductor device package comprising:

• providing a substrate having a top planar surface and one or more components coupled to the substrate, the one or more components comprising:
• a first semiconductor die connected to the top planar surface of the substrate, wherein the substrate and the first semiconductor die defines at least a portion of a tunnel;
• and
• a second semiconductor die mounted on the top planar surface of the substrate and positioned within the tunnel, the second semiconductor die electrically connected to the substrate by one or more bond wires;
• forming a mold, the mold including:
• a first molding compound;
• and
• a second molding compound, wherein the second molding compound is separate and distinct from the first molding compound,
• wherein the first molding compound, when in a flowable state, has a viscosity that is less than a viscosity of the second molding compound, when in a flowable state;
• and
• compressing the mold on the substrate causing the first molding compound to liquify and encapsulate the semiconductor die and substantially fill the tunnel,
• wherein the first molding compound at least partially encapsulates the first semiconductor die and the second semiconductor die, and
• wherein the second molding compound is separated from the first semiconductor die by a portion of the first molding compound.