Self-aligned metal gate for multigate device and method of forming thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJia-Chuan You, Kuan-Ting Pan, Shi Ning Ju, Kuo-Cheng Chiang, Chih-Hao Wang
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Abstract
Devices and methods that a first gate structure wrapping around a channel layer disposed over the substrate, a second gate structure wrapping around another channel layer disposed over the substrate and a dielectric fin structure formed over a shallow trench isolation (STI) feature and between the first and second gate structures. At least one metallization layer is formed on the first gate structure, the dielectric fin structure, and the second gate structure and contiguously extends from the first gate structure to the second gate structure.
Claims19
A device comprising:
- a substrate;
- a first gate structure wrapping around a channel layer disposed over the substrate;
- a second gate structure wrapping around another channel layer disposed over the substrate;
- a dielectric fin structure formed over a shallow trench isolation (STI) feature, wherein the dielectric fin structure is between the first gate structure and the second gate structure;
- at least one metallization layer on the first gate structure, the dielectric fin structure, and the second gate structure and contiguously extending from the first gate structure to the second gate structure, wherein an upper surface of each of the first gate structure, the second gate structure, and the dielectric fin structure provide a continuous planar surface, the at least one metallization layer interfacing the continuous planar surface.
A device, comprising:
- a first channel layer disposed between first source/drain features over a substrate;
- a first metal gate that surrounds the first channel layer;
- a second channel layer disposed between second source/drain features over the substrate;
- a second metal gate that surrounds the second channel layer;
- a dielectric fin disposed between and separating the first metal gate and the second metal gate;
- a first portion of a conductive layer over the first metal gate;
- a second portion of the conductive layer over the second metal gate;
- and
- an isolation layer between the first portion and second portion of the conductive layer and over the dielectric fin, wherein the first portion of the conductive includes a rounded terminal end abutting the isolation layer and disposed vertically over the first metal gate.
A device comprising:
- a first channel layer, a second channel layer, and a third channel layer each extending in a first direction;
- a first metal gate surrounding the first channel layer, a second metal gate surrounding the second channel layer, and a third metal gate surrounding the third channel layer;
- a dielectric fin disposed between and separating the second metal gate and the third metal gate and a gate separation feature above the dielectric fin;
- a first portion of a conductive layer over the first metal gate and the second metal gate the first portion of the conductive layer extending from a first terminal end to a second terminal end, wherein the first terminal end is disposed vertically over the first metal gate and the second terminal end is disposed vertically over the second metal gate;
- a second portion of the conductive layer over the third metal gate;
- and
- an isolation layer between the first portion of the conductive layer and the second portion of the conductive layer and over the dielectric fin, wherein the second terminal end of the first portion of the conductive layer includes a rounded terminal surface abutting the isolation layer.
Dependencies are inferred from the claim text.