Package component with stepped passivation layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Da Cheng, Tzy-Kuang Lee, Song-Bor Lee, Wen-Hsiung Lu, Po-Hao Tsai, Wen-Che Chang
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Abstract
A method includes forming a first conductive feature, depositing a passivation layer on a sidewall and a top surface of the first conductive feature, etching the passivation layer to reveal the first conductive feature, and recessing a first top surface of the passivation layer to form a step. The step comprises a second top surface of the passivation layer. The method further includes forming a planarization layer on the passivation layer, and forming a second conductive feature extending into the passivation layer to contact the first conductive feature.
Claims20
A method comprising:
- forming a first conductive feature;
- depositing a passivation layer covering the first conductive feature;
- forming a planarization layer on the passivation layer;
- performing a first etching process to etch through the passivation layer;
- after the passivation layer is etched-through, performing a second etching process on the passivation layer, wherein during the second etching process, the planarization layer is exposed to a chemical used for the second etching process;
- and
- forming a second conductive feature extending into the passivation layer to contact the first conductive feature.
A method comprising:
- forming a device die comprising:
- forming a metal pad;
- depositing a passivation layer over and contacting the metal pad;
- forming a photo-sensitive layer on the passivation layer;
- light-exposing and developing the photo-sensitive layer to reveal the passivation layer;
- performing a first etching process on the passivation layer;
- after the first etching process, performing a second etching process, wherein the first etching process and the second etching process are performed using different process conditions, and wherein the photo-sensitive layer remains until a time after the second etching process is performed;
- after the second etching process, forming conductive feature extending into the passivation layer to contact the metal pad;
- and
- bonding a package component to the device die, with a solder region bonding the package component to the conductive feature.
A method comprising:
- forming a metal pad;
- depositing a passivation layer over and contacting the metal pad;
- forming a patterned planarization layer on the passivation layer;
- performing a first etching process to etch through the passivation layer;
- performing a second etching process to laterally recess the passivation layer, wherein a first top surface of the passivation layer is exposed;
- performing a third etching process to etch the passivation layer that has been laterally recessed, so that the passivation layer has a second top surface, and the second top surface is lower than the first top surface, wherein during the second etching process and the third etching process, the patterned planarization layer is exposed to respective etching chemicals;
- and
- depositing a metal seed layer extending into the passivation layer, wherein the metal seed layer is in contact with both of the first top surface and the second top surface.
Dependencies are inferred from the claim text.