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US 11,961,746 B2Granted
Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsSho Kumakura, Hironari Sasagawa, Maju Tomura, Yoshihide Kihara
Life of this patent
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Abstract
A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.
Claims20
A method of processing a substrate comprising:
- (a) forming a recess on a substrate by partially etching the substrate;
- (b) forming a film on a side wall of the recess such that the film has a thickness that differs along a depth direction of the recess, on a side wall of the recess;
- (c) etching the substrate while suppressing a change of an opening dimension of an upper portion of the recess by the film formed in (b), thereby forming the recess having a tapered shape;
- and
- (d) expanding an opening dimension of a lower portion of the recess that is not covered with the film formed in (b) in a horizontal direction.
2 more elements
Dependencies are inferred from the claim text.