Semiconductor structure and manufacturing method
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorZhenyu Liu
Life of this patent
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Abstract
A semiconductor structure includes a substrate including a base and a plurality of fins discretely formed over the base. Each fin is made of a material including a first atom and contains openings therein. The semiconductor structure also includes a source-drain doped layer located in each opening and including a seed layer on a surface of an inner wall of the opening and a body layer on a surface of the seed layer. A material of the seed layer includes the first atom, a second atom, and a third atom. A material of the body layer includes the first atom and the second atom.
Claims17
A semiconductor structure comprising:
- a substrate, including a base and a plurality of fins discretely formed over the base, wherein each fin is made of a material including a first atom and contains openings therein;
- and
- a source-drain doped layer, located in each opening and including a seed layer on a surface of an inner wall of the opening and a body layer on a surface of the seed layer, a material of the seed layer including the first atom, a second atom, and a third atom, and a material of the body layer including the first atom and the second atom but not including the third atom, the third atom including a germanium atom;
- wherein a concentration percentage of the germanium atom respect to a total amount of atoms of the source-drain doped layer ranges from 5% to 10%.
A manufacturing method for a semiconductor structure comprising:
- providing a substrate, the substrate including a base and a plurality of fins discretely formed over the base, wherein each fin is made of a material including a first atom;
- forming openings in each fin of the plurality of fins;
- and
- forming a source-drain doped layer in each opening using an epitaxial growth process, the source-drain doped layer including a seed layer on a surface of an inner wall of the opening and a body layer on a surface of the seed layer, a material of the seed layer including the first atom, a second atom, and a third atom, and a material of the body layer including the first atom and the second atom but not including the third atom, the third atom including a germanium atomi wherein a concentration percentage of the germanium atom respect to a total amount of atoms of the source-drain doped layer ranges from 5% to 10%.
Dependencies are inferred from the claim text.