Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

A substrate processing method, comprising:

• forming an oxide film in which a first oxide film and a second oxide film are alternately laminated on a substrate by alternately performing, a predetermined number of times:
• (a) forming the first oxide film containing an atom X by performing a first cycle n1 times (n1 is an integer of 1 or more), the first cycle including non-simultaneously performing (a1) forming a first layer including a component in which a first functional group is bonded to the atom X by supplying a precursor, which includes a partial structure in which the first functional group and a second functional group are directly bonded to the atom X and has a bonding energy between the first functional group and the atom X higher than a bonding energy between the second functional group and the atom X, to the substrate, and (a2) forming a second layer containing the atom X and oxygen by supplying a first oxidizing agent to the substrate to oxidize the first layer;
• and
• (b) forming the second oxide film containing the atom X by performing a second cycle n2 times (n2 is an integer of 1 or more), the second cycle including non-simultaneously performing (b1) forming a third layer including a component in which the first functional group is bonded to the atom X by supplying the precursor to the substrate, and (b2) forming a fourth layer containing the atom X and oxygen by supplying a second oxidizing agent to the substrate to oxidize the third layer, under a processing condition that an oxidizing power is higher than an oxidizing power when oxidizing the first layer in (a2).

A substrate processing apparatus, comprising:

• a process chamber in which a substrate is processed;
• a precursor supply system configured to supply a precursor, which includes a partial structure in which a first functional group and a second functional group are directly bonded to an atom X and has a bonding energy between the first functional group and the atom X higher than a bonding energy between the second functional group and the atom X, to the substrate in the process chamber;
• a first oxidizing agent supply system configured to supply a first oxidizing agent to the substrate in the process chamber;
• a second oxidizing agent supply system configured to supply a second oxidizing agent to the substrate in the process chamber;
• a heater configured to heat the substrate in the process chamber;
• and
• a controller configured to be capable of controlling the precursor supply system, the first oxidizing agent supply system, the second oxidizing agent supply system, and the heater so as to perform, in the process chamber:
• forming an oxide film in which a first oxide film and a second oxide film are alternately laminated on the substrate by alternately performing, a predetermined number of times:
• (a) forming the first oxide film containing the atom X by performing a first cycle n1 times (n1 is an integer of 1 or more), the first cycle including non-simultaneously performing (a1) forming a first layer including a component in which the first functional group is bonded to the atom X by supplying the precursor to the substrate, and (a2) forming a second layer containing the atom X and oxygen by supplying the first oxidizing agent to the substrate to oxidize the first layer;
• and
• (b) forming the second oxide film containing the atom X by performing a second cycle n2 times (n2 is an integer of 1 or more), the second cycle including non-simultaneously performing (b1) forming a third layer including a component in which the first functional group is bonded to the atom X by supplying the precursor to the substrate, and (b2) forming a fourth layer containing the atom X and oxygen by supplying the second oxidizing agent to the substrate to oxidize the third layer, under a processing condition that an oxidizing power is higher than an oxidizing power when oxidizing the first layer in (a2).

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:

• forming an oxide film in which a first oxide film and a second oxide film are alternately laminated on a substrate by alternately performing, a predetermined number of times:
• (a) forming the first oxide film containing an atom X by performing a first cycle n1 times (n1 is an integer of 1 or more), the first cycle including non-simultaneously performing (a1) forming a first layer including a component in which a first functional group is bonded to the atom X by supplying a precursor, which includes a partial structure in which the first functional group and a second functional group are directly bonded to the atom X and has a bonding energy between the first functional group and the atom X higher than a bonding energy between the second functional group and the atom X, to the substrate, and (a2) forming a second layer containing the atom X and oxygen by supplying a first oxidizing agent to the substrate to oxidize the first layer;
• and
• (b) forming the second oxide film containing the atom X by performing a second cycle n2 times (n2 is an integer of 1 or more), the second cycle including non-simultaneously performing (b1) forming a third layer including a component in which the first functional group is bonded to the atom X by supplying the precursor to the substrate, and (b2) forming a fourth layer containing the atom X and oxygen by supplying a second oxidizing agent to the substrate to oxidize the third layer, under a processing condition that an oxidizing power is higher than an oxidizing power when oxidizing the first layer in (a2).