Method for manufacturing High-K MIM capacitor to improve electrical characteristics
AssigneeElohim Incorporation
InventorsSeunggu Lim, Jihoon Cha, Dong-Ki Lee, Taedong Kim, Yeonglyeol Park
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Abstract
An embodiment of the present disclosure provides a MIM capacitor by High-k dielectric and method for fabricating the same to prevent formation of oxygen-based interface films between a lower electrode and a dielectric layer, and between an upper electrode and a dielectric layer by stacking a first film formed of metal between the dielectric layer formed of a High-k material having a high dielectric constant and the lower electrode formed of metal, and a second film formed of metal between the dielectric layer and the upper electrode.
Claims19
A MIM (metal insulator metal) capacitor comprising:
- a lower electrode formed of metal;
- a first film deposited on the lower electrode;
- a dielectric layer deposited on the first film;
- a second film deposited on the dielectric layer;
- and
- an upper electrode formed of metal on the second film,
- wherein the first film and the second film are deposited with a film formed of a metal component of only hafnium or zirconium.
A method for fabricating a MIM capacitor, comprising:
- a step of depositing a lower electrode formed of metal;
- a step of depositing a first film on the lower electrode;
- a step of depositing a dielectric layer on the first film;
- a step of depositing a second film on the dielectric layer;
- and
- a step of depositing an upper electrode formed of metal on the second film,
- wherein the first film and the second film are deposited with a film formed of a metal component of only hafnium or zirconium.
A stacked silicon capacitor comprising:
- a first electrode;
- a second electrode;
- a dielectric layer formed of a first dielectric layer and a second dielectric layer, disposed between the first electrode and the second electrode, and formed of a silicon dielectric material;
- a first film deposited on the first electrode;
- and
- a second film deposited on the dielectric layer,
- wherein a dielectric constant of the first dielectric layer is greater than a dielectric constant of the second dielectric layer, and
- wherein the first film and the second film are deposited with a film formed of a metal component of only hafnium or zirconium.
A method for fabricating a stacked silicon capacitor, comprising:
- forming a first electrode;
- forming a first dielectric layer on the first electrode;
- stacking a second dielectric layer having a different dielectric constant from that of the first dielectric layer on the first dielectric layer;
- and
- forming a second electrode on the second dielectric layer,
- wherein a dielectric constant of the first dielectric layer is greater than a dielectric constant of the second dielectric layer, and
- wherein the first dielectric layer is formed at a thickness of 5 nm to 6 nm, the second dielectric layer is formed at a thickness of 1 nm to 3 nm.
Dependencies are inferred from the claim text.