Memory device that is optimized for operation at different temperatures

A storage device, comprising:

• a non-volatile memory including a plurality of memory cells arranged in a plurality of word lines;
• a control circuitry that is communicatively coupled to the memory cells and is configured to program the memory cells to at least one programmed data state in a plurality of program-verify iterations, during the program-verify iterations, the control circuitry being configured to;
• apply a programming pulse to a control gate of a selected word line of the plurality of word lines to program at least one memory cell of the selected word line, and
• conduct a sensing operation to compare a threshold voltage of at least one memory cell of the selected word line to a low verify voltage associated with a first programmed data state and to a high very voltage associated with the first programmed data state, the sensing operation including discharging a sense node through a bit line coupled to the at least one memory cell and monitoring a discharge time of the sense node, wherein at least one aspect of the sensing operation is temperature dependent so that a voltage gap between the high and low verify voltages is generally constant across a range of temperatures, wherein the sensing operation includes comparing the discharge time of the sense node to a first sensing time and to a second sensing time, and wherein at least one of
• (i) the first sensing time and the second sensing time are adjusted based on temperature to control the voltage gap, and
• (ii) a difference between the first sensing time and the second sensing time is adjusted based on the temperature to control the voltage gap.

An apparatus, comprising:

• a non-volatile memory including a plurality of memory cells arranged in a plurality of word lines;
• a programming and sensing means for programming the memory cells to at least one programmed data state in a plurality of program-verify iterations, during the program-verify iterations, the programming and sensing means being configured to;
• apply a programming pulse to a control gate of a selected word line of the plurality of word lines to program at least one memory cell of the selected word line, and
• conduct a sensing operation to compare a threshold voltage of at least one memory cell of the selected word line to a low verify voltage associated with a first programmed data state and to a high very voltage associated with the first programmed data state and to slow programming of the at least one memory cell in response to the threshold voltage of the at least one memory cell being between the low and high verify voltages, the sensing operation including discharging a sense node through a bit line coupled to the at least one memory cell and monitoring a discharge time of the sense node, wherein a voltage that the sense node is charged to or a sense timing is temperature dependent so that a voltage gap between the high and low verify voltages is generally constant across a range of temperatures, wherein the sensing operation includes comparing the discharge time of the sense node to a first sensing time and to a second sensing time, and wherein at least one of
• (i) the first sensing time and the second sensing time are adjusted based on temperature to control the voltage gap, and
• (ii) a difference between the first sensing time and the second sensing time is adjusted based on the temperature to control the voltage gap.