Edge word line data retention improvement for memory apparatus with on-pitch semi-circle drain side select gate technology

A controller in communication with a memory apparatus including memory cells connected to one of a plurality of word lines including at least one edge word line and a plurality of other data word lines and arranged in strings and configured to retain a threshold voltage corresponding to one of a plurality of data states, the strings being organized in rows, the controller configured to:

• identify the at least one edge word line;
• and
• instruct the memory apparatus to program from an erased data state the memory cells of the strings in particular ones of the rows and associated with the at least one edge word line to have an altered distribution of the threshold voltage for one or more of the plurality of data states compared to the memory cells of the strings not in particular ones of the rows and not associated with the at least one edge word line during a program operation, the particular ones of the rows including semi-circle rows comprising memory holes that are partially cut by a shallow hole etch.

A method of operating a memory apparatus including memory cells connected to one of a plurality of word lines including at least one edge word line and a plurality of other data word lines and arranged in strings and configured to retain a threshold voltage corresponding to one of a plurality of data states, the strings being organized in rows, the method comprising the steps of:

• identifying the at least one edge word line;
• and
• programming from an erased state the memory cells of the strings in particular ones of the rows and associated with the at least one edge word line to have an altered distribution of the threshold voltage for one or more of the plurality of data states compared to the memory cells of the strings not in particular ones of the rows and not associated with the at least one edge word line during a program operation, the particular ones of the rows including semi-circle rows comprising memory holes that are partially cut by a shallow hole etch.