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US 11,961,560 B2Granted
Integrated circuit devices
AssigneeSamsung Electronics Co., Ltd.
InventorsMyunghun Lee, Sangwan Nam, Taemin Ok
Life of this patent
Estimating the term…
Abstract
An integrated circuit device includes a peripheral circuit structure including a lower substrate, an arc protection diode in the lower substrate, and a common source line driver connected to the arc protection diode, a conductive plate on the peripheral circuit structure, a cell array structure overlapping the peripheral circuit structure in a vertical direction with the conductive plate therebetween, and a first wiring structure connected between the arc protection diode and the conductive plate.
Claims13
An integrated circuit device comprising:
- a peripheral circuit structure comprising a lower substrate, an arc protection diode in the lower substrate, and a common source line driver connected to the arc protection diode;
- a conductive plate on the peripheral circuit structure;
- a cell array structure overlapping the peripheral circuit structure in a vertical direction with the conductive plate therebetween;
- and
- a first wiring structure connected between the arc protection diode and the conductive plate,
- wherein the common source line driver comprises:
- a gate on the lower substrate;
- a drain in the lower substrate at a position adjacent the gate and integrated with the arc protection diode;
- and
- a source in the lower substrate on an opposite side of the gate from the drain, and wherein a first planar area of the drain is greater than a second planar area of the source.
7 more elements
An integrated circuit device comprising:
- a peripheral circuit structure comprising a lower substrate, an arc protection diode in the lower substrate, and a common source line driver that comprises a transistor connected to the arc protection diode;
- a cell array structure that overlaps the peripheral circuit structure in a vertical direction and comprises a memory stack comprising a plurality of gate lines stacked in the vertical direction and a channel structure penetrating the plurality of gate lines in the vertical direction;
- a conductive plate between the peripheral circuit structure and the cell array structure;
- and
- a first wiring structure connected between the arc protection diode and the conductive plate,
- wherein the transistor of the common source line driver comprises:
- a gate on the lower substrate;
- a source in the lower substrate at a position adjacent a first side of the gate;
- and
- a drain in the lower substrate at a position adjacent a second side of the gate and integrated with the arc protection diode,
- wherein a first planar area of the drain is greater than a second planar area of the source.
8 more elements
An integrated circuit device comprising:
- a peripheral circuit region comprising a peripheral circuit structure, wherein the peripheral circuit structure comprises a lower substrate, an arc protection diode in the lower substrate, and a common source line driver connected to the arc protection diode;
- a cell region comprising a cell array structure overlapping the peripheral circuit structure in a vertical direction, wherein the cell region is vertically connected to the peripheral circuit region;
- and
- a conductive plate comprising a conductive region, wherein the conductive plate is between the peripheral circuit structure and the cell array structure,
- wherein the common source line driver comprises a transistor that comprises a gate, a source in the lower substrate adjacent a first side of the gate, and a drain in the lower substrate adjacent a second side of the gate and connected to the arc protection diode,
- wherein the cell array structure comprises a plurality of gate lines stacked in the vertical direction on the conductive plate and a channel structure penetrating the plurality of gate lines in the vertical direction,
- wherein the peripheral circuit structure further comprises a first wiring structure connected between the arc protection diode and the conductive plate,
- wherein the drain of the transistor is integrated with the arc protection diode, and
- wherein a length of the drain is greater than a length of the source in a channel length direction of the transistor.
6 more elements
Dependencies are inferred from the claim text.