Memory device
AssigneeKioxia Corporation
InventorYosuke Kobayashi
Life of this patent
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Abstract
A memory cell is coupled between first and interconnects and includes a variable resistance element and a switching element. The variable resistance element includes first and second ferromagnetic layers and an insulating layer between the first and second ferromagnetic layers. A first circuit is configured to apply a first voltage to the first interconnect. A second circuit is configured to apply a second voltage to the second interconnect. A third circuit is configured to apply a third voltage to the second interconnect. A fourth circuit is configured to apply a fourth voltage to the first interconnect. A sense amplifier circuit is coupled to the first and second interconnects.
Claims18
A memory device comprising:
- a first interconnect;
- a second interconnect;
- a memory cell coupled between the first interconnect and the second interconnect and including a variable resistance element and a switching element, the variable resistance element including a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer;
- a first circuit configured to apply a first voltage to the first interconnect;
- a second circuit configured to apply a second voltage to the second interconnect;
- a third circuit configured to apply a third voltage to the second interconnect;
- a fourth circuit configured to apply a fourth voltage to the first interconnect;
- and
- a sense amplifier circuit coupled to the first interconnect and the second interconnect.
A memory device comprising:
- a first interconnect;
- a second interconnect;
- a memory cell coupled between the first interconnect and the second interconnect and including a variable resistance element and a switching element, the variable resistance element including a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer;
- and
- a first circuit configured to:
- perform a first operation and a second operation;
- apply a first voltage to the first interconnect, bring the first interconnect into a floating state after the application of the first voltage, and apply a second voltage to the second interconnect while the first interconnect is in the floating state, in the first operation, the second voltage being lower than the first voltage;
- and
- apply a third voltage to the second interconnect, bring the second interconnect into a floating state after the application of the third voltage, and apply a fourth voltage to the first interconnect while the second interconnect is in the floating state, in the second operation, the third voltage being different from the first voltage, the fourth voltage being lower than the third voltage.
Dependencies are inferred from the claim text.