Circuit design and layout with high embedded memory density

A memory device, comprising:

• a plurality of cells in a plurality of rows and in a plurality of columns, wherein each cell comprises a first memory cell, a second memory cell, and a transistor;
• a first bit line extending along a first row of the plurality of rows;
• and
• a second bit line extending along the first row;
• wherein the first memory cell of each cell in the first row is electrically coupled to the first bit line, wherein the transistor of each cell in the first row is electrically coupled from the first bit line to the second bit line, and wherein the second memory cell of each cell in the first row is electrically coupled to the second bit line.

A memory device, comprising:

• a first transistor and a second transistor over a substrate and each having a first source/drain region and a second source/drain region;
• an interconnect structure over and electrically coupled to the first and second transistors and further comprising a plurality of wires and a plurality of vias that are alternatingly stacked;
• and
• a first memory cell and a second memory cell over the first and second transistors, in the interconnect structure, and each having a first electrode and a second electrode;
• wherein the interconnect structure electrically shorts the first electrodes of the first and second memory cells and the first source/drain regions of the first and second transistors together.