Extreme ultraviolet lithography device and method of operating extreme ultraviolet lithography device
AssigneeSamsung Electronics Co., Ltd.
InventorsHoduk Cho, Seongbo Shim, Hyungjong Bae, Chan Hwang
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Abstract
An operating method of an extreme ultraviolet (EUV) lithography device includes defining a target image to render an illumination system, assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, assigning a mirror according to the assigned priorities using linear programming, generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion, and converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.
Claims20
An operating method of an extreme ultraviolet (EUV) lithography device, the method comprising:
- defining a target image to render an illumination system;
- assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, wherein the assigning priorities to the respective positions of the facets of the pupil facet mirror comprises assigning a value to each position of the facets of the pupil facet mirror;
- assigning a mirror according to the assigned priorities using linear programming based on the assigned values to each position of the facets of the pupil facet mirror;
- generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion;
- and
- converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.
An extreme ultraviolet (EUV) lithography device comprising:
- an EUV light source;
- a first optical system comprising a freeform illumination system and configured to receive EUV light from the EUV light source and incident the EUV light on an EUV mask;
- a second optical system configured to receive the EUV light reflected from the EUV mask and incident the reflected EUV light on a wafer;
- a mask stage on which the EUV mask is provided;
- a wafer stage on which the wafer is provided;
- and
- a controller configured to:
- control the mask stage and the wafer stage, and
- render the freeform illumination system by:
- assigning priorities to respective positions of the facets of pupil facet mirror by assigning a value to each position of the facets of the pupil facet mirror, and
- assigning, using linear programming, a field facet mirror to the pupil facet mirror based on the assigned values to each position of the facets of the pupil facet mirror.
An extreme ultraviolet (EUV) lithography device comprising:
- an EUV light source;
- a field facet mirror configured to reflect light from the EUV light source;
- a pupil facet mirror configured to receive light reflected from the field facet mirror and reflect the received light to a mask;
- and
- a controller configured to:
- assign a priority to the pupil facet mirror based on a target image corresponding to a rendering of an illumination optical system by assigning a value to each position of facets of the pupil facet mirror, and
- assign the field facet mirror as the pupil facet mirror to which the priority is assigned using linear programming based on the assigned values to each position of the facets of the pupil facet mirror.
Dependencies are inferred from the claim text.