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US 11,959,958 B2Granted
Method of analyzing semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi Min Liu, Chien-Yi Chen, Yian-Liang Kuo
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Abstract
A method includes providing a detector disposed above a semiconductor structure; identifying a portion of the semiconductor structure at a temperature substantially greater than a predetermined threshold by the detector; rotating the stage; and deriving a position of the portion of the semiconductor structure based upon the rotation of the stage.
Claims20
A method, comprising:
- providing a stage, a semiconductor structure disposed on the stage, and a detector disposed above the semiconductor structure;
- identifying a portion of the semiconductor structure at a temperature substantially greater than a predetermined threshold by the detector;
- rotating the stage;
- and
- deriving a position of the portion of the semiconductor structure based upon the rotating the stage,
- wherein the semiconductor structure is stacked dies including a plurality of dies stacking over each other, and the portion of the semiconductor structure is covered by one of the plurality of dies.
3 more elements
A method, comprising:
- identifying a portion of a semiconductor structure at a temperature substantially greater than a predetermined threshold by a detector;
- rotating the detector around the semiconductor structure;
- and
- deriving a position of the portion of the semiconductor structure based upon the rotating the detector,
- wherein the rotating the detector includes moving the detector from a first position above the semiconductor structure to a second position under the semiconductor structure, or moving the detector from the second position to the first position.
2 more elements
A method, comprising:
- providing a detector, a stage and a semiconductor structure on the stage;
- identifying a portion of the semiconductor structure at a temperature substantially greater than a predetermined threshold by the detector;
- rotating the stage;
- rotating the detector about the stage;
- and
- deriving a position of the portion of the semiconductor structure based upon the rotating the stage and the rotating the detector,
- wherein the rotating the stage includes rotating the stage about at least one of a first axis of the semiconductor structure, a second axis of the semiconductor structure substantially orthogonal to the first axis and a third axis of the semiconductor structure substantially orthogonal to the first axis and the second axis.
4 more elements
Dependencies are inferred from the claim text.