Photolithography method and photolithography system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Hung Liao, Wei Chang Cheng
Life of this patent
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Abstract
A photolithography method includes dispensing a first liquid toward a target layer through a nozzle at a first distance from the target layer; moving the nozzle such that the nozzle is at a second distance from the target layer, wherein the second distance is different from the first distance; dispensing a second liquid toward the target layer through the nozzle at the second distance from the target layer; and patterning the target layer after dispensing the first liquid and the second liquid.
Claims20
A photolithography method, comprising:
- dispensing a first liquid toward a target layer through a nozzle at a first distance from the target layer;
- capturing an image of the first liquid during the dispensing of the first liquid;
- comparing the image with a reference image of the first liquid to obtain a comparison dataset;
- moving the nozzle such that the nozzle is at a second distance from the target layer, wherein the second distance is different from the first distance, and wherein the first distance and the second distance are sensed by a distance sensor;
- dispensing a second liquid toward the target layer through the nozzle at the second distance from the target layer;
- and
- patterning the target layer after dispensing the first liquid and the second liquid.
A photolithography method, comprising:
- receiving a wafer with a target layer over the wafer;
- coating the target layer with a bottom layer using a dispensing nozzle at a first distance from the target layer;
- vertically moving the dispensing nozzle such that the dispensing nozzle is at a second distance from the target layer, wherein the second distance is different from the first distance;
- coating the bottom layer with a middle layer using the dispensing nozzle at the second distance from the target layer;
- vertically moving the dispensing nozzle such that the dispensing nozzle is at a third distance from the target layer, wherein the third distance is different from the first and second distances, and wherein the first, second, and third distances are sensed by a distance sensor;
- coating the middle layer with a top layer using the dispensing nozzle at the third distance from the target layer;
- curing the bottom layer, the middle layer, and the top layer to form a tri-layer photoresist;
- patterning the tri-layer photoresist;
- and
- patterning the target layer using the patterned tri-layer photoresist as a mask.
A photolithography method, comprising:
- determining a first distance between a dispensing nozzle and a target layer over a first wafer, the first distance suitable for spin-on coating a first layer on the target layer through the dispensing nozzle;
- vertically moving the dispensing nozzle such that the dispensing nozzle is at the first distance from the target layer;
- coating the target layer with the first layer using the dispensing nozzle disposed at the first distance from the target layer;
- determining a second distance between the dispensing nozzle and the target layer, the second distance suitable for spin-on coating a second layer over the target layer through the dispensing nozzle;
- vertically moving the dispensing nozzle such that the dispensing nozzle is at the second distance from the target layer;
- coating the first layer with the second layer using the dispensing nozzle disposed at the second distance from the target layer;
- baking the first and second layers;
- and
- patterning the target layer,
- wherein the first distance and the second distance are sensed by a distance sensor,
- wherein the second distance is different from the first distance.
Dependencies are inferred from the claim text.