Methods of forming structures, semiconductor processing systems, and semiconductor device structures
AssigneeASM IP Holding B.V.
InventorsAmir Kajbafvala, Yanfu Lu, Robinson James, Caleb Miskin
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Abstract
A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.
Claims18
A method of forming a structure, comprising:
- providing a substrate in a reaction chamber;
- forming a first layer overlaying the substrate;
- forming a second layer onto the first layer;
- wherein temperature of the first layer is controlled during forming the first layer using infrared electromagnetic radiation emitted by the first layer;
- and
- wherein temperature of the second layer is controlled during forming the second layer using infrared electromagnetic radiation emitted by the second layer.
Dependencies are inferred from the claim text.