Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
AssigneeASM IP Holding B.V.
InventorsTimo Hatanpää, Katja Väyrynen, Mikko Ritala, Markku Leskelä
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Abstract
Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 μΩ-cm at a film thickness of less than 50 nanometers.
Claims20
A method of forming a transition metal containing film on a substrate by a cyclical deposition process, the method comprising:
- contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a monodentate, bidentate, or multidentate containing adduct ligand;
- and
- contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor, wherein the adduct ligand coordinates to a transition metal atom through at least one of a nitrogen atom, a phosphorous atom, an oxygen atom, or a sulfur atom.
Dependencies are inferred from the claim text.