Asymmetric injection for better wafer uniformity

A method for processing a substrate, comprising:

• injecting a gas flow in a first direction from a gas source into a gas injector when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, the substrate support having a first edge and a second edge opposite the first edge in a direction orthogonal to the first direction, the processing chamber having a chamber gas inlet and a chamber gas outlet, the substrate support disposed between the chamber gas inlet and the chamber gas outlet in the first direction;
• and
• injecting the gas flow from the gas injector into the processing chamber, wherein:
• the gas flow from the gas injector is directed in a second direction and a third direction;
• the second and third directions are misaligned with a center of a substrate disposed on the substrate support and are at an angle to the first direction towards the second edge of the substrate support;
• the first, second, and third directions are parallel to a first plane;
• the second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards the second edge of the substrate support;
• and
• the second and third directions are not the same.