Semiconductor device comprising oxide semiconductor film

A semiconductor device comprising:

• a transistor;
• an oxide semiconductor film comprising a channel of the transistor;
• a gate electrode of the transistor overlapping with the oxide semiconductor film with a gate insulating film of the transistor provided therebetween;
• an insulating film over the gate electrode;
• and
• a wiring over the insulating film,
• wherein the wiring is electrically connected to the oxide semiconductor film via a first opening provided in the insulating film and the gate insulating film,
• wherein the oxide semiconductor film comprises a second opening overlapping with the first opening,
• wherein the oxide semiconductor film is in contact with the wiring in the second opening, and
• wherein the wiring has a region overlapping with a conductive film provided below the oxide semiconductor film.

A semiconductor device comprising:

• a transistor;
• a first insulating film;
• an oxide semiconductor film comprising a channel of the transistor over and in contact with the first insulating film;
• a gate electrode of the transistor overlapping with the oxide semiconductor film with a gate insulating film of the transistor provided therebetween;
• a second insulating film over the gate electrode;
• and
• a wiring over the second insulating film,
• wherein the wiring is electrically connected to the oxide semiconductor film via a first opening provided in the second insulating film and the gate insulating film,
• wherein the oxide semiconductor film comprises a second opening overlapping with the first opening,
• wherein the oxide semiconductor film is in contact with the wiring in the second opening,
• wherein the wiring has a region overlapping with a conductive film provided below the oxide semiconductor film, and
• wherein the conductive film is in contact with the first insulating film.