3D semiconductor devices and structures with transistors

A semiconductor device, the device comprising:

• a plurality of transistors,
• wherein at least one of said plurality of transistors comprises a first single crystal source, channel, and drain,
• wherein at least one of said plurality of transistors comprises a second single crystal source, channel, and drain,
• wherein said second single crystal source, channel, and drain is disposed above said first single crystal source, channel, and drain,
• wherein at least one of said plurality of transistors comprises a third single crystal source, channel, and drain,
• wherein said third single crystal source, channel, and drain is disposed above said second single crystal source, channel, and drain,
• wherein at least one of said plurality of transistors comprises a fourth single crystal source, channel, and drain, and
• wherein at least one of said plurality of transistors comprises a gate all around structure.

A semiconductor device, the device comprising:

• a plurality of transistors,
• wherein at least one of said plurality of transistors comprises a first single crystal channel,
• wherein at least one of said plurality of transistors comprises a second single crystal channel,
• wherein said second single crystal channel is disposed above said first single crystal channel,
• wherein at least one of said plurality of transistors comprises a third single crystal channel,
• wherein said third single crystal channel is disposed above said second single crystal channel,
• wherein at least one of said plurality of transistors comprises a fourth single crystal channel,
• wherein said fourth single crystal channel is disposed above said third single crystal channel,
• wherein said least one of said plurality of transistors is a horizontally oriented transistor;
• and
• wherein said device comprise at least one region of oxide to oxide bonds.