Wide-range perpendicular sensitive magnetic sensor and method for manufacturing the same

A method for manufacturing a wide-range perpendicular sensitive magnetic sensor, the method comprising:

• preparing a plurality of magnetic tunnel junctions on a substrate, the plurality of magnetic tunnel junctions comprising a first magnetic tunnel junction and a second magnetic tunnel junction;
• preparing connection lines on the substrate, the connection lines comprising a first connection line for connecting the first magnetic tunnel junction and a first output port, and a second connection line for connecting the second magnetic tunnel junction and a second output port, the first output port and the second output port being both configured to output a sensing signal representing a magnetic induction intensity of a magnetic field in a Z-axis direction, the Z-axis direction being a direction perpendicular to the substrate;
• wherein a magnetic sensing direction of the first magnetic tunnel junction is a positive direction of the Z-axis, and a magnetic sensing direction of the second magnetic tunnel junction is a negative direction of the Z-axis;
• or the magnetic sensing direction of the first magnetic tunnel junction is the negative direction of the Z-axis, and the magnetic sensing direction of the second magnetic tunnel junction is the positive direction of the Z-axis;
• wherein the magnetic sensor includes a voltage input port and a ground port;
• wherein the first output port includes a first positive output port and a first negative output port, and the first output port is configured to output a voltage of the first magnetic tunnel junction;
• the first positive output port, the first negative output port, the voltage input port, the ground port and the first magnetic tunnel junction forming a first push-pull Wheatstone full-bridge structure;
• the first output port obtaining a first output voltage of the first magnetic tunnel junction;
• the first output voltage being linearly related to magnetic reluctance of the first magnetic tunnel junction, and the magnetic reluctance of the first magnetic tunnel junction being linearly related to an external magnetic field;
• wherein the second output port includes a second positive output port and a second negative output port, and the second output port is configured to output a voltage of the second magnetic tunnel junction;
• the second positive output port, the second negative output port, the voltage input port, the ground port, and the second magnetic tunnel junction forming a second push-pull Wheatstone full-bridge structure;
• the second output port obtaining a second output voltage of the second magnetic tunnel junction;
• the second output voltage being linearly related to magnetic reluctance of the second magnetic tunnel junction, and the magnetic reluctance of the second magnetic tunnel junction being linearly related to the external magnetic field;
• and
• preparing a plurality of magnetic flux regulators above the plurality of magnetic tunnel junctions based on positions of the first magnetic tunnel junction and the second magnetic tunnel junction on the substrate, such that the first magnetic tunnel junction is located below the magnetic flux regulator and the second magnetic tunnel junction is located below a gap between two adjacent magnetic flux regulators;
• the first magnetic tunnel junction and the second magnetic tunnel junction being arranged in partitions on the substrate.