Glass electrochemical sensor with wafer level stacking and through glass via (TGV) interconnects
AssigneeCorning Incorporated
InventorsRobert Alan Bellman, Jeffrey Stapleton King, Scott Christopher Pollard
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Abstract
A method of forming a glass electrochemical sensor is described. In some embodiments, the method may include forming a plurality of electrical through glass vias (TGVs) in an electrode substrate; filling each of the plurality of electrical TGVs with an electrode material; forming a plurality of contact TGVs in the electrode substrate; filling each of the plurality of contact TGVs with a conductive material; patterning the conductive material to connect the electrical TGVs with the contact TGVs; forming a cavity in a first glass layer; and bonding a first side of the first glass layer to the electrode substrate.
Claims9
A glass electrochemical sensor, comprising:
- a glass substrate including a plurality of through glass vias (TGVs), wherein the plurality of TGVs are at least partially filled with an electrode material;
- an electrode disposed on a bottom surface of the glass substrate adjacent to at least one of the TGVs;
- and
- a first glass layer comprising a cavity;
- wherein the bottom surface of the glass substrate is bonded to a first side of the first glass layer such that the electrode is positioned within the cavity.
Dependencies are inferred from the claim text.