Back to results
US 11,953,461 B2Granted
Electrode structure
AssigneeHitachi High-Tech Corporation
InventorsUkyo Ikeda, Tetsuyoshi Ono, Hiroki Nakatsuchi, Masafumi Miyake
Life of this patent
Estimating the term…
Abstract
An electrode formed by molding a semiconductor device with resin. The electrode comprises: a first resin mold portion formed on a front surface of the semiconductor device and having a first thickness (t1); a second resin mold portion formed on a back surface of the semiconductor device and having a second thickness (t2) greater than the first thickness; and an exposed portion formed in a part of the first resin mold portion corresponding to an end of the semiconductor device.
Claims12
An ion-selective electrode, comprising:
- a first resin mold portion formed on a front surface of a semiconductor device and having a first thickness;
- a second resin mold portion formed on a back surface of the semiconductor device and having a second thickness greater than the first thickness;
- an exposed portion formed in a part of the first resin mold portion corresponding to an end of the semiconductor device;
- a specimen flow path formed in the second resin molded portion;
- and
- an external terminal having a potential configured to change in response to an ion concentration of a specimen in the specimen flow path.
3 more elements
Dependencies are inferred from the claim text.