Optimized growth of stable hybrid perovskite materials for electromagnetic and particle radiation detection

An inverse temperature crystallization process for forming a single crystal perovskite, the process comprising:

• introducing a precursor solution of a single crystal perovskite material having a composition represented by formula ABX3 into a crystallization chamber, wherein the precursor solution comprises a solvent and one or more compounds comprising atoms that form A, B, and X in the single crystal perovskite material, wherein A is at least one organic cation having a +1 or +2 charge, B is at least one inorganic cation having a +2 or +4 charge, and X is at least one anion having a −1 or −2 charge;
• heating the precursor solution to a pre-nucleation temperature;
• heating the precursor solution to a nucleation temperature that is at least about 2° C. above the pre-nucleation temperature to form a plurality of seed crystals;
• and
• growing the single crystal perovskite material by lowering a temperature of the precursor solution to a crystal growth temperature below the nucleation temperature and introducing additional solvent or additional precursor solution into the crystallization chamber during the growing of the single crystal perovskite material, wherein the single crystal perovskite material has a volume of greater than or equal to about 1 mm3.

A crystallization chamber for an inverse temperature crystallization process to form a single crystal perovskite, the crystallization chamber comprising:

• a first plate and a second plate disposed in parallel to one another, wherein the first plate defines an internal surface near which the single crystal perovskite can grow;
• a spacer disposed between the first plate and the second plate that defines a sealed internal volume between the first plate and the second plate that contains at least one seed crystal of the single crystal perovskite;
• a reservoir containing a precursor solution of the single crystal perovskite having a composition represented by formula ABX3 into a crystallization chamber, wherein the precursor solution comprises a solvent and one or more compounds comprising atoms that form A, B, and X in the single crystal perovskite, wherein A is at least one organic cation having a +1 or +2 charge, B is at least one inorganic cation having a +2 or +4 charge, and X is at least one anion having a −1 or −2 charge;
• an inlet in fluid communication with the internal volume configured to receive the precursor solution from the reservoir;
• an outlet in fluid communication with the internal volume through which the precursor solution can flow;
• a pump configured to pump the precursor solution from the inlet across the seed crystal in the internal volume to the outlet;
• and
• at least one heater for heating the precursor solution to a predetermined temperature for growth of the single crystal perovskite material in the internal volume.