Laminate of aluminum nitride single-crystal substrate
AssigneeTokuyama Corporation
InventorMasao Ariyuki
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Abstract
A method for effectively removing minute impurities of 1 μm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface includes scrubbing a surface of an aluminum nitride single-crystal substrate using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass % concentration of potassium hydroxide or sodium hydroxide, the alkali aqueous solution being absorbed in the polymer compound material.
Claims5
An aluminum nitride single crystal substrate, comprising an AlN single crystal substrate wherein:
- a number of foreign matters larger than 1 μm per 400 μm2 of a surface of the substrate is less than 1,
- a number of the foreign matters of 1 μm or less is less than 1 per 400 μm2 of a surface of the substrate, and
- a root mean square roughness per 4 μm2 of the surface of the substrate is 0.06 to 0.30 nm.
Dependencies are inferred from the claim text.