Optically switchable memory
AssigneeUniversity of Hull
InventorNeil Kemp
Life of this patent
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Abstract
A method of manufacturing a storage device for storing information, apparatus for storing information, an optical memristor device and a memory cell are disclosed. A method comprises providing at least one first electrode and at least one further electrode and providing each of at least one region of a first material between, and in electrical connection with, a respective first electrode and a further electrode whereby said step of providing at least one region comprises providing in the first material, a plurality of changeable particles that have charge storage capacity and at least one electrical property that is reversibly changeable responsive to absorption of incident electromagnetic radiation.
Claims20
A method of manufacturing a storage device for storing information, comprising the steps of:
- providing at least one first electrode and at least one further electrode;
- and
- providing each of at least one region of a first material between, and in electrical connection with, a respective first electrode and a further electrode;
- whereby
- said step of providing at least one region comprises providing in the first material, a plurality of changeable particles that have charge storage capacity and at least one electrical property that is reversibly changeable responsive to absorption of incident electromagnetic radiation.
Apparatus for storing information, comprising:
- at least one first electrode and at least one further electrode;
- at least one region of a first material, each region being disposed between, and in electrical connection with, a respective first electrode and a further electrode;
- and
- a plurality of changeable particles, in the first material, that have charge storage capability and at least one electrical property that is reversibly changeable responsive to absorption of incident electromagnetic radiation.
An optical memristor device for reversible latched switching, wherein at least a portion of the device has an electrical property that is indicative of a memristor state and is reversibly switchable responsive to incident electromagnetic radiation in less than 60 seconds between a first property state and at least one further property state and optionally is switchable in less than 300 ns.
A memory cell, comprising:
- a bit line;
- a word line;
- a bit line electrode;
- a word line electrode;
- and
- an active region between and in electrical connection with the bit line electrode and the word line electrode, wherein an electrical property in the active region that is indicative of a memory cell state is reversibly switchable responsive to incident electromagnetic radiation in less than 60 seconds between a first electrical property state and at least one further electrical property state.
Dependencies are inferred from the claim text.