Methods and apparatus for forming dual metal interconnects

An integrated tool for performing semiconductor processing, the integrated tool, comprising:

• a set of process chambers of the integrated tool that are interconnected under vacuum and configured to form a dual metal interconnect structure, the dual metal interconnect structure including:
• at least one 1X feature formed with a first barrier layer with a thickness of approximately 5 angstroms to approximately 12 angstroms and filled with a conductive material having low diffusivity, high electromigration resistance, low scattering, and low resistivity at critical dimensions (CD) of approximately 15 nm or less, where X is a minimum feature width;
• and
• at least one 3X to 5X feature formed with the first barrier layer and partially filled with the conductive material used in forming the at least one 1X feature and filled with a copper-based material with low resistivity.

An integrated tool for performing semiconductor processing, the integrated tool, comprising:

• a set of process chambers of the integrated tool that are interconnected under vacuum and configured to perform a set of processes of a method for creating a dual metal interconnect, the method including:
• depositing a first liner of a first nitride material into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of 5 angstroms to approximately 12 angstroms, wherein X is a minimum feature width;
• depositing a second liner of a first metal material into the at least one 1X feature and at least one wider than 1X feature, wherein the second liner has a thickness of approximately 40 angstroms to approximately 60 angstroms;
• reflowing the first metal material such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains partially filled;
• depositing a second metal material on the first metal material;
• and
• reflowing the second metal material such that the at least one wider than 1X feature is filled with the second metal material.