Hafnium oxide corrosion inhibitor
AssigneeVersum Materials US, LLC
InventorsWen Dar Liu, Yi-Chia Lee
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Abstract
Described herein is an etching solution suitable for the selective removal of TiSiN over hafnium oxide from a microelectronic device, which consists essentially of: water; at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide, a quaternary ammonium hydroxide, ammonium fluoride, and a quaternary ammonium fluoride; at least one peroxide compound; a water-miscible organic solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, and a polyamine; and optionally at least one chelating agent.
Claims17
An etching solution suitable for the selective removal of TiSiN over hafnium oxide from a microelectronic device, consisting of:
- water;
- from about 3.7 to about 4.5 wt. % neat of at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide;
- from about 3.9 to about 4.5 wt. % neat of at least one peroxide compound;
- a water-miscible organic solvent;
- and
- at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, and a polyamine;
- and
- optionally a surfactant.
An etching solution suitable for the selective removal of TiSiN over hafnium oxide from a microelectronic device, consisting of:
- from about 3.7 to about 4.5 wt. % neat of at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide;
- from about 3.9 to about 4.5 wt. % neat of at least one peroxide compound;
- from about 10 to about 15 wt. % of a water-miscible organic solvent;
- from about 0.4 to about 1 wt. % of at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, and a polyamine;
- and
- water.
An etching solution suitable for the selective removal of TiSiN over hafnium oxide from a microelectronic device, consisting of:
- about 4.2 wt. % of ammonium hydroxide (neat);
- about 4.3% of hydrogen peroxide (neat);
- from about 0.4 to about 1.2 wt. % of ammonium fluoride (neat);
- about 10% of a water-miscible organic solvent;
- from about 0.30 to about 1% of at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, and a polyamine;
- and
- water.
Dependencies are inferred from the claim text.