Method for producing a metal-ceramic substrate, solder system, and metal-ceramic substrate produced using such a method

A metal-ceramic substrate (1) manufactured by a method comprising

• providing at least one ceramic layer (10), at least one metal layer (20) and at least one solder layer (30), wherein the solder layer comprises AgCuln, AgCuGa, CuIn, CuGa, CulnSn, CulnMb, CuGaSn, CuNi, CuNiMn and/or NiCrMn,
• coating the at least one ceramic layer (10) and/or the at least one metal layer (20) and/or the at least one solder layer (30) with at least one active metal layer (40),
• arranging the at least one solder layer (30) between the at least one ceramic layer (10) and the at least one metal layer (20) along a stacking direction (S), forming a solder system (35) comprising the at least one solder layer and the at least one active metal layer (40), and
• bonding the at least one metal layer (20) to the at least one ceramic layer (10) via the solder system (35) by means of an active solder process, wherein a first thickness (D1) of the at least one active metal layer (40) has a value between 100 nm and 1000 nm, and wherein a ratio of the first thickness (D1) of the at least one active metal layer (40) to a second thickness (D2) of the solder layer (30) has a value between 0.003 and 0.5.

A method for manufacturing a metal-ceramic substrate (1), comprising:

• providing at least one ceramic layer (10), at least one metal layer (20) and at least one solder layer (30), wherein the solder layer comprises AgCuln, AgCuGa, CuIn, CuGa, CulnSn, CulnMb, CuGaSn, CuNi, CuNiMn and/or NiCrMn,
• coating the at least one ceramic layer (10) and/or the at least one metal layer (20) and/or the at least one solder layer (30) with at least one active metal layer (40), wherein the active metal layer is arranged between the solder layer and the ceramic layer,
• arranging the at least one solder layer (30) between the at least one ceramic layer (10) and the at least one metal layer (20) along a stacking direction (S), forming a solder system (35) comprising the at least one solder layer and the at least one active metal layer (40), and
• bonding the at least one metal layer (20) to the at least one ceramic layer (10) via the solder system (35) by means of an active solder process, wherein a first thickness (D1) of the at least one active metal layer (40) has a value between 100 nm and 1000 nm, and wherein a ratio of the first thickness (D1) of the at least one active metal layer (40) to a second thickness (D2) of the solder layer (30) has a value between 0.003 and 0.5.