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US 11,939,268 B2Granted
Low-k material and method for manufacturing the same
AssigneeIndustrial Technology Research Institute
InventorsKuo-Chuang Chiu, Tzu-Yu Liu, Tien-Heng Huang, Tzu-Chi Chou, Cheng-Ting Lin
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Abstract
A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.
Claims7
A low-k material, comprising:
- a first ceramic with a low melting point dispersed in a second ceramic with a low melting point and a low dielectric constant, wherein the second ceramic are connected to form a network structure of a microcrystal phase,
- wherein the first ceramic comprises (1) silicon oxide, magnesium oxide, aluminum oxide, calcium oxide, boron oxide, and zinc oxide,
- wherein the silicon oxide and the magnesium oxide have a weight ratio of 100:0 to 100:85,
- wherein the silicon oxide and the aluminum oxide have a weight ratio of 100:20 to 100:150,
- wherein the silicon oxide and the calcium oxide have a weight ratio of 100:2 to 100:20,
- wherein the silicon oxide and the boron oxide have a weight ratio of 100:2 to 100:70, and
- wherein the silicon oxide and the zinc oxide have a weight ratio of 100:2 to 100:70;
- or
- wherein the first ceramic comprises (2) silicon oxide, aluminum oxide, calcium oxide, and boron oxide,
- wherein the silicon oxide and the aluminum oxide have a weight ratio of 100:15 to 100:25,
- wherein the silicon oxide and the calcium oxide have a weight ratio of 100:10 to 100:25, and
- wherein the silicon oxide and the boron oxide have a weight ratio of 100:30 to 100:50.
9 more elements
Dependencies are inferred from the claim text.