Biphasic material and stretchable circuit board
AssigneeYale University
InventorsRebecca Kramer-Bottiglio, Shanliangzi Liu, Dylan Shah, Lina Mercedes Sanchez Botero
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Abstract
A biphasic composition comprises a quantity of liquid GaIn and a plurality of solid particles of Ga2O3 suspended in the quantity of liquid GaIn, the Ga2O3 particles having a median particle size between 8 μm and 25 μm, wherein the volumetric ratio of solid particles of Ga2O3 to liquid GaIn is between 0.4 and 0.7. A method of making a biphasic composition of GaIn, a method of making a stretchable circuit board assembly, and a stretchable circuit board assembly are also described.
Claims33
A biphasic composition, comprising:
- a quantity of liquid GaIn;
- and
- a plurality of solid particles of Ga2O3 suspended in the quantity of liquid GaIn, the Ga2O3 particles having a median particle size between 8 μm and 25 μm;
- wherein the volumetric ratio of solid particles of Ga2O3 to liquid GaIn is between 0.4 and 0.7.
A method of making a biphasic composition of GaIn, comprising:
- depositing a layer of GaIn nanoparticles on a substrate;
- heating the deposited layer of GaIn nanoparticles in an enclosed furnace to a temperature between 800 and 1000° C. for a time duration between 5 minutes and 60 minutes to form a film comprising a quantity of liquid GaIn and a plurality of solid particles of Ga2O3 suspended in the quantity of liquid GaIn, the Ga2O3 particles having a median particle size between 8 μm and 25 μm wherein the volumetric ratio of solid particles to liquid metal is between 0.4 and 0.7;
- and
- cooling the film in ambient conditions.
A method of making a stretchable circuit board assembly, comprising:
- depositing a layer of GaIn nanoparticles on a first substrate;
- heating the deposited layer of GaIn nanoparticles in an enclosed furnace to a temperature between 800 and 1000° C. for a time duration between 5 minutes and 60 minutes to form a GaIn film comprising a quantity of liquid GaIn and a plurality of solid particles of Ga2O3 suspended in the quantity of liquid GaIn, the Ga2O3 particles having a median particle size between 8 μm and 25 μm wherein the volumetric ratio of solid particles to liquid metal is between 0.4 and 0.7;
- cooling the GaIn film in ambient conditions;
- transferring at least a portion of the GaIn film to the second stretchable substrate to form at least one GaIn trace;
- securing one or more electrical components to the at least one GaIn trace;
- and
- encapsulating the one or more electrical components and the at least one GaIn trace with a stretchable encapsulating layer.
A stretchable circuit board assembly comprising:
- a stretchable substrate;
- at least one GaIn trace positioned over the stretchable substrate;
- at least one electrical component electrically connected to the at least one GaIn trace and positioned over the stretchable substrate;
- and
- a stretchable encapsulating layer positioned over the stretchable substrate, the at least one GaIn trace, and the at least one electrical component, configured to seal the at least one GaIn trace and the at least one electrical component from outside air;
- wherein the at least one GaIn trace comprises a quantity of liquid GaIn and a plurality of solid particles of Ga2O3 suspended in the quantity of liquid GaIn, the Ga2O3 particles having a median particle size between 8 μm and 25 μm wherein the volumetric ratio of solid particles to liquid metal is between 0.4 and 0.7.
A method of making a stretchable circuit board assembly, comprising:
- depositing a first layer of GaIn nanoparticles on a first substrate;
- depositing a second layer of GaIn nanoparticles on a second substrate;
- heating the deposited first and second layers of GaIn nanoparticles in an enclosed furnace to a temperature between 800 and 1000° C. for a time duration between 5 minutes and 60 minutes to form a first and second GaIn film comprising a quantity of liquid GaIn and a plurality of solid particles of Ga2O3 suspended in the quantity of liquid GaIn, the Ga2O3 particles having a median particle size between 8 μm and 25 μm wherein the volumetric ratio of solid particles to liquid metal is between 0.4 and 0.7;
- cooling the first and second GaIn films in ambient conditions;
- transferring at least a portion of the first GaIn film to a first surface of a stretchable substrate to form at least one first GaIn trace;
- transferring at least a portion of the second GaIn film to a second surface of a stretchable substrate to form at least one second GaIn trace, wherein the second surface is opposite the first surface;
- securing one or more electrical components to the at least one first and second GaIn traces;
- encapsulating the one or more electrical components and the at least one first GaIn trace with a first stretchable encapsulating layer;
- and
- encapsulating the one or more electrical components and the at least one second GaIn trace with a second stretchable encapsulating layer.
A method of making a biphasic composition of GaIn, comprising:
- depositing GaIn nanoparticles into a crucible;
- heating the GaIn nanoparticles in an enclosed furnace to a temperature between 800 and 1000° C. for a time duration between 5 minutes and 60 minutes to form a film comprising a quantity of liquid GaIn and a plurality of solid particles of Ga2O3 suspended in the quantity of liquid GaIn, the Ga2O3 particles having a median particle size between 8 μm and 25 μm wherein the volumetric ratio of solid particles to liquid metal is between 0.4 and 0.7;
- and
- cooling the GaIn in ambient conditions.
A method of making a stretchable circuit board assembly, comprising:
- depositing a layer of GaIn nanoparticles into a crucible;
- heating the GaIn nanoparticles in an enclosed furnace to a temperature between 800 and 1000° C. for a time duration between 5 minutes and 60 minutes to form a GaIn film comprising a quantity of liquid GaIn and a plurality of solid particles of Ga2O3 suspended in the quantity of liquid GaIn, the Ga2O3 particles having a median particle size between 8 μm and 25 μm wherein the volumetric ratio of solid particles to liquid metal is between 0.4 and 0.7;
- cooling the GaIn film in ambient conditions;
- transferring at least a portion of the GaIn film to the second stretchable substrate to form at least one GaIn trace;
- securing one or more electrical components to the at least one GaIn trace;
- and
- encapsulating the one or more electrical components and the at least one GaIn trace with a stretchable encapsulating layer.
Dependencies are inferred from the claim text.