Semiconductor device with oxide-nitride stack

A method of making a semiconductor device, comprising:

• providing a semiconductor layer;
• forming a first trench into the semiconductor layer;
• forming a second trench into the semiconductor layer;
• forming a first column of semiconductor material in the semiconductor layer between the first trench and second trench;
• forming a second column of semiconductor material in the semiconductor layer between the first trench and second trench;
• forming an oxide layer over a surface of the semiconductor layer and over a sidewall of the first trench;
• and
• forming a nitride layer over the oxide layer as formed over the surface of the semiconductor layer and further formed over the oxide layer as formed over the sidewall of the first trench.

A semiconductor device, comprising:

• a semiconductor layer;
• a first trench formed into the semiconductor layer;
• a second trench formed into the semiconductor layer;
• a first column of semiconductor material formed in the semiconductor layer between the first trench and second trench;
• a second column of semiconductor material formed in the semiconductor layer between the first trench and second trench;
• a first oxide layer formed over a surface of the semiconductor layer and over a sidewall of the first trench;
• and
• a first nitride layer formed over the first oxide layer as formed over the surface of the semiconductor layer and further formed over the first oxide layer as formed over the sidewall of the first trench.

A semiconductor device, comprising:

• a substrate;
• a semiconductor layer formed over the substrate;
• a first trench formed through the semiconductor layer and extending to the substrate;
• a second trench formed through the semiconductor layer and extending to the substrate;
• a first column of semiconductor material formed through the semiconductor layer between the first trench and second trench and extending to the substrate;
• a second column of semiconductor material formed through the semiconductor layer between the first trench and second trench and extending to the substrate;
• an oxide layer formed over a surface of the semiconductor layer and over a sidewall of the first trench;
• and
• a nitride layer formed over the oxide layer as formed over the surface of the semiconductor layer and further formed over the oxide layer as formed over the sidewall of the first trench.

A semiconductor device, comprising:

• a semiconductor layer;
• a first trench formed through the semiconductor layer;
• a second trench formed through the semiconductor layer;
• a first column of semiconductor material formed through the semiconductor layer between the first trench and second trench;
• a second column of semiconductor material formed through the semiconductor layer between the first trench and second trench;
• an oxide layer formed over a surface of the semiconductor layer and over a sidewall of the first trench;
• and
• a nitride layer formed over the oxide layer as formed over the surface of the semiconductor layer and further formed over the oxide layer as formed over the sidewall of the first trench.