Substrate processing method
AssigneeTokyo Electron Limited
InventorsJun Yamawaku, Chishio Koshimizu
Life of this patent
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Abstract
There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.
Claims11
A deposit removing method for removing deposits from an inner ring of a substrate processing apparatus comprising a chamber;
- a susceptor for mounting thereon a substrate provided in the chamber;
- the inner ring positioned in the chamber so as to surround the susceptor;
- an outer ring placed so as to surround the inner ring;
- and a plasma generator configured to generate plasma in the chamber,
- wherein the deposit removing method comprises:
- lifting the inner ring away from a top surface of the susceptor when the substrate is not on the susceptor, wherein the inner ring is lifted to such a position that a bottom surface of the inner ring is higher than the top surface of the susceptor and deposits adhering to the inner ring are exposed;
- generating plasma in the chamber;
- and
- exposing the inner ring to the plasma while the inner ring is lifted to decompose and remove the deposits therefrom.
A substrate processing method comprising:
- placing a substrate on a susceptor in a chamber, the substrate being surrounded by an inner ring and an outer ring wherein the outer ring is placed so as to surround the inner ring in the chamber;
- etching the substrate by generating a first plasma in the chamber;
- unloading the substrate from the chamber;
- lifting the inner ring away from a top surface of the susceptor in a state that the substrate is not on the susceptor;
- and
- generating a second plasma in the chamber;
- lifting the inner ring in the chamber to expose deposits adhering to the inner ring, wherein the inner ring is lifted to such a position that a bottom surface of the inner ring is higher than the top surface of the susceptor;
- and
- exposing the inner ring to the second plasma while the inner ring is lifted to decompose and remove the deposits in the chamber.
Dependencies are inferred from the claim text.