Silyl pseudohalides for silicon containing films
AssigneeApplied Materials, Inc.
InventorsKeenan N. Woods, Cong Trinh, Mark Saly, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Lisa J. Enman
Life of this patent
Estimating the term…
Abstract
Silyl pseudohalides having a general formula of R4-nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.
Claims17
A method of depositing a silicon-containing film, the method comprising exposing a substrate to a silyl pseudohalide and a reagent to deposit the silicon-containing film, the silyl pseudohalide has a general formula of R4-nSiXn, wherein n is 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkylamino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from selenocyanate and isoselenocyanate.
A method of depositing a SiO-containing film, the method comprising exposing a substrate to a silyl pseudohalide and an oxidizing agent to deposit the SiN-containing film, wherein the silyl pseudohalide has a general formula of R4-nSiXn, wherein n is 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from selenocyanate and isoselenocyanate.
Dependencies are inferred from the claim text.